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| Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT131 series D and E QUICK REFERENCE DATA SYMBOL PARAMETER BT131BT131VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600D 600E 600 1 12.5 MAX. UNIT 800D 800E 800 1 12.5 V A A PINNING - TO92 PIN 1 2 3 DESCRIPTION main terminal 2 PIN CONFIGURATION SYMBOL T2 gate main terminal 1 321 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tlead 66 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ t = 2 s max t = 2 s max over any 20 ms period CONDITIONS MIN. -40 -600 6001 1 12.5 13.7 0.78 50 50 50 10 2 5 0.1 150 125 MAX. -800 800 UNIT V A A A A2s A/s A/s A/s A/s A W W C C I2t dIT/dt IGM PGM PG(AV) Tstg Tj Peak gate current Peak gate power Average gate power Storage temperature Junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. May 2004 1 Rev 1.000 Philips Semiconductors Product specification Triacs logic level THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient CONDITIONS full cycle half cycle pcb mounted;lead length = 4mm BT131 series D and E MIN. - TYP. 150 MAX. 60 80 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS BT131IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ 0.2 1.3 1.2 0.7 0.3 0.1 MIN. TYP. MAX ...D 5 5 5 7 10 20 10 10 10 1.5 1.5 0.5 ...E 10 10 10 10 15 25 15 15 10 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 1.4 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER dVcom/dt Critical rate of rise of commutation voltage Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS BT131VD = 400 V; Tj = 125 C; dIcom/dt = 0.5 A/ms; VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. ...D 3 ...E 5 TYP. MAX. UNIT V/s V/s dVD/dt tgt 20 50 2 s May 2004 2 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series D and E 1 Ptot (W) 0.8 = 180 120 90 60 65 Tlead (max) (C) 77 1.2 IT(RMS) (A) 1 66 C 0.6 30 89 0.8 0.6 0.4 101 0.4 0.2 113 0.2 0 0 0.4 0.8 IT(RMS) (A) 125 1.2 0 -50 0 50 100 150 Tlead (C) Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. IT(RMS) / A 103 ITSM (A) IT tp ITSM time 3 2.5 2.0 1.5 Tj initial = 25 C max 102 dIT/dt limit 1 0.5 0 0.01 T2- G+ quadrant 10 10-5 10-4 10-3 10-2 tp (S) 10-1 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead 66C. VGT(Tj) VGT(25 C) 14 ITSM (A) 12 T 10 Tj initial = 25 C max IT ITSM time 1.6 1.4 1.2 1 0.8 0.6 8 6 4 2 0 1 10 102 103 Number of cycles at 50Hz 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. May 2004 3 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series D and E 3 2.5 2 1.5 1 IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 2 IT (A) 1.6 Tj = 25 C Tj = 125 C typ 1.2 max 0.8 0.4 0.5 0 -50 0 0 0.4 0.8 1.2 1.6 VT (V) 2 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 100 Zth j-sp (K/W) 3 2.5 2 10 unidirectional 1 bidirectional 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s P D tp 0.1 t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. 1000 dVD/dt (V/s) BT131 100 ...E ...D 10 3 2.5 2 1.5 1 0.5 0 -50 0 50 Tj / C 100 150 1 0 50 100 Tj C 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Minimum, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. May 2004 4 Rev 1.000 Philips Semiconductors Product specification Triacs logic level MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads BT131 series D and E SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". May 2004 5 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series D and E DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2004 6 Rev 1.000 |
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